to ? 92 1.emitter 2.collect or 3.base jiangsu changjiang elec tron ics technology co., ltd to -92 plastic-encapsulate transistors KSC5019 transistor (npn) fea tures z low v ce(sat ) z general purpose amplifier transistor maximum ratings (t a =25 unless otherw ise noted) electrical characteristics (t a =25 unless otherw ise specified) parameter symbol test conditions min typ max unit collecto r-base breakdown voltage v (br)cb o i c = 0.1ma,i e =0 30 v collecto r-emitter breakdown v (br)ce o i c =10ma,i b =0 10 v emitter-ba se breakdown voltage v (br )ebo i e =1ma,i c =0 6 v collecto r cut-off current i cbo v cb =30v ,i e =0 0.1 a emitter cut-off current i ebo v eb =6v ,i c =0 0.1 a h fe(1) v ce =1v , i c =500ma 140 600 dc curr ent gain h fe(2) v ce =1v , i c =2 a 70 collecto r-emitter saturation voltage v ce(sa t) i c =2a,i b =50ma 0.5 v base-emitter vo ltage v be v ce =1v , i c =500ma 1.5 v collecto r output capacitance c ob v cb =10v ,i e =0, f=1mhz 27 pf tr ansition frequency f t v ce =1v,i c = 500ma 150 mhz classification of h fe(1) ran k l m n p ran ge 140-240 200-330 300-450 420-600 symbol paramete r value unit v cbo collector-bas e voltage 30 v v ceo collector-emitter v oltage 10 v v ebo emitter-base vo ltage 6 v i c collector curr ent 2 a p c collector po wer dissipation 750 mw r ja thermal resist ance from junction to ambient 166 / w t j junction temperature 150 t stg st orage temperature -55~+150 www.cj-elec.com 1 c , dec ,201 5
min max min m ax a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad lay out www.cj-elec.com c , dec ,2015
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 3 c,dec,2015
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